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SUP/SUB75N03-04
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
100
V GS = 10 V
I D = 30 A
2.0
T J = 150 °C
1.5
1.0
0.5
10
T J = 25 °C
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0.3 0.6 0.9 1.2
1.5
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
100
1000
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
80
100
Limited
by r DS(on)
100 μs
60
40
10
1 ms
10 ms
20
T C = 25 °C
Single Pulse
100 ms
dc
0
0
25
50 75 100 125
150
175
1
0.1
1.0 10.0
100.0
2
1
T C - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
Duty Cycle = 0.5
0.2
0.1
V DS - Drain-to-Source Voltage (V)
Safe Operating Area
0.1
0.05
0.02
Single Pulse
0.01
10 - 5
10 - 4
10 - 3
10 - 2
10 - 1
1
3
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70745.
www.vishay.com
4
Document Number: 70745
S-62484-Rev. F, 04-Dec-06
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